Axial solute transport during Bridgman growth of BiSbTe3-mixed crystals - a comparison of analytical and numerical results

2D/3D-transient finite-element computer simulations of heat and mass transp ort including convection have been performed for a Bridgman configuration c lose to real growth conditions. The results for the axial distribution of t he excessive tellurium in BiSbTe3 semiconductor crystals grown from the mel t are compared with the predictions of analytical segregation models. It is shown that Favier's model can be successfully applied for quantitatively e stimating model parameters of segregation. Finally, the transition from nor mal gravity to microgravity conditions is discussed.