InGaAsP/InP heterostructure doped by cobalt

The preparation of a new type of InGaAsP/InP heterostructures for light emi tting diodes is presented. The active region of the heterostructure contain s thin layers of nondoped InGaAsP (lambda=1.3 mu m) alternating with barrie r layers of InGaAsP (lambda=1.1 mu m) doped by cobalt. Properties of prepar ed heterostructures were tested on edge emitting diodes with the stripe geo metry. Curves of the minority carrier lifetime and the optical power versus current are compared with those obtained on classical bulk InGaAsP/InP dou ble heterostructure. It is shown that the new structure is very eligible fo r construction of high- speed noncoherent 1.3 mu m diodes operating at low pumping current.