Texturization of semiconductor surfaces: ZnTe

We report on the texturization of ZnTe crystal surfaces by electrochemical etching using acidic solution (HNO3:HCl:H2O)(1:4:20). The morphology of etc hed crystals is examined by scanning electron microscopy and selected micro graphs are presented to illustrate the effects of different experimental co nditions. Electrochemical etching under galvanostatic conditions (100-300 m A cm(-2)) gives generally more reproducible and homogeneous etch pits. Curr ent-potential characteristics of the p-ZnTe/electrolyte junctions have been studied in the dark and under illumination. We observed an enhancement of the photocurrent after the electrochemical etching process due to increased absorption after the electrochemical etching. (C) 1999 The Electrochemical Society. S1099-0062(99)07-006-6. All rights reserved.