Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers

Authors
Huang, XD Stintz, A Hains, CP Liu, GT Cheng, J Malloy, KJ
Citation
Xd. Huang et al., Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers, ELECTR LETT, 36(1), 2000, pp. 41-42
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
41 - 42
Database
ISI
SICI code
0013-5194(20000106)36:1<41:EHCLOO>2.0.ZU;2-1
Abstract
Efficient, continuous-wave lasing operation of narrow-stripe, oxide-confine d, long-wavelength InAs quantum dot lasers in the ground state (lambda simi lar or equal to 1.28 mu m) has been achieved at temperatures up to 100 degr ees C. The lasers have a very low threshold current density (J(th) = 24 A/m (2)), high differential quantum efficiency (55), and very low internal loss (alpha(i) = 0.77cm(-1)).