Bs. Shelton et al., AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition, ELECTR LETT, 36(1), 2000, pp. 80-81
Heterojunction bipolar transistors based on aluminium gallium nitride/galli
um nitride (AlGaN/GaN) structures have been fabricated and characterised. T
he devices were grown by metal organic chemical vapour deposition on e-plan
e sapphire substrates. The Npn structure consists of an n-GaN layer followe
d by an n(+)-GaN subcollector contact, an unintentionally doped GaN collect
or, p-GaN base, and an N-Al(0.1)G(0.9)N emitter with n(+)-GaN contact. Devi
ces yielded good transistor performance with a DC current gain as high as 1
00 at room temperature.