Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Authors
Arzberger, M Lohner, M Bohm, G Amann, MC
Citation
M. Arzberger et al., Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction, ELECTR LETT, 36(1), 2000, pp. 87-88
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
87 - 88
Database
ISI
SICI code
0013-5194(20000106)36:1<87:LPCFID>2.0.ZU;2-9
Abstract
A lattice-matched p(+)/n(+)-InGaAs tunnel junction for use in the realisati on of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n(+)/p(+) (similar to 1 0(20)cm(-3)) InGaAs layers grown by solid-source molecular beam epitaxy sho w ohmic behaviour and very low specific contact resistivities of similar to 3 x 10(-6)Ohm cm(2).