Citation
Jw. Yang et al., Photoenhanced electrochemical etching for p-GaN, ELECTR LETT, 36(1), 2000, pp. 88-90
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
88 - 90
Database
ISI
SICI code
0013-5194(20000106)36:1<88:PEEFP>2.0.ZU;2-A
Abstract
An effective wet chemical etching method for p-GaN is proposed based on the
surface band bending of the semiconductor. The metal organic chemical vapo
ur deposition (MOCVD) grown p-CaN was successfully etched by biasing the su
bstrate below -3V during photoenhanced electrochemical etching using KOH: s
olution and Hg lamp illumination. The etch rate increased with increasing n
egative voltage and was as high as 2.1 mu m/min at -10V.