Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

Authors
Zhou, L Ping, AT Khan, F Osinsky, A Adesida, I
Citation
L. Zhou et al., Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, ELECTR LETT, 36(1), 2000, pp. 91-93
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
91 - 93
Database
ISI
SICI code
0013-5194(20000106)36:1<91:TOCOPG>2.0.ZU;2-1
Abstract
The electrical characteristics of Ti/Pt/Au contacts on p-type GaN/ A1(x)Ga( 1-x)N (x = 0.10 and 0.20) superlattices (SL) have been investigated. Curren t-voltage and specific contact resistance measurements indicate enhanced p- type doping in the superlattice structures compared to that in GaN. Ti/Pt/A u is demonstrated to be an effective ohmic metallisation scheme for GaN/Alx Ga1-xN superlattices. A low specific contact resistance of 4.6 x 10(-4) Ohm cm(2) is reported for unalloyed Ti/Pt/Au on an GaN/Al0.2N SL.