Thin photodiodes for a scintillator-silicon well detector

Citation
Cp. Allier et al., Thin photodiodes for a scintillator-silicon well detector, IEEE NUCL S, 46(6), 1999, pp. 1948-1951
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
2
Pages
1948 - 1951
Database
ISI
SICI code
0018-9499(199912)46:6<1948:TPFASW>2.0.ZU;2-4
Abstract
In developing position sensitive radiation sensors, e.g. for medical imagin g, low-gain silicon well sensors were made for the detection of scintillati on light. The 3x3 arrays include N++NP diodes, processed in the similar to 12 mu m thick membranes that remain after thinning of 530 mu m thick (100) silicon wafers by means of a potassium hydroxide (KOH) solution. A comparis on is made for the light detection efficiency of these diodes with that of a 500 mu m thick PIN photodiode.