In developing position sensitive radiation sensors, e.g. for medical imagin
g, low-gain silicon well sensors were made for the detection of scintillati
on light. The 3x3 arrays include N++NP diodes, processed in the similar to
12 mu m thick membranes that remain after thinning of 530 mu m thick (100)
silicon wafers by means of a potassium hydroxide (KOH) solution. A comparis
on is made for the light detection efficiency of these diodes with that of
a 500 mu m thick PIN photodiode.