Charge deposition modeling of thermal neutron products in fast submicron MOS devices

Ground-based thermal neutron reaction products (a, Li-7) appear to be an im portant terrestrial SEE concern for modern submicron technologies. We addre ss some interesting spatial and temporal characteristics of neutron product s. Accurate modeling of the temporal behavior of these products may be requ ired for high-speed devices. In addition, we introduce a simulation methodo logy that determines device sensitivity to neutron reaction products as a f unction of neutron nuclear reaction location and the resulting ion track or ientation.