Single event burnout sensitivity of embedded field effect transistors

Authors
Koga, R Crain, SH Crawford, KB Yu, P Gordon, MJ
Citation
R. Koga et al., Single event burnout sensitivity of embedded field effect transistors, IEEE NUCL S, 46(6), 1999, pp. 1395-1402
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1395 - 1402
Database
ISI
SICI code
0018-9499(199912)46:6<1395:SEBSOE>2.0.ZU;2-3
Abstract
Observations of single event burnout (SEB) in embedded field effect transis tors are reported. Both SEE and other single event effects are presented fo r several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.