On the role of energy deposition in triggering SEGR in power MOSFETs

Authors
Selva, LE Swift, GM Taylor, WA Edmonds, LD
Citation
Le. Selva et al., On the role of energy deposition in triggering SEGR in power MOSFETs, IEEE NUCL S, 46(6), 1999, pp. 1403-1409
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1403 - 1409
Database
ISI
SICI code
0018-9499(199912)46:6<1403:OTROED>2.0.ZU;2-#
Abstract
Single event gate rupture (SEGR) was studied using three types of power MOS FET devices with ions having incident linear energy transfers (LETs) in sil icon from 26 to 82 MeV.cm(2)/mg. Results are: 1) consistent with Wrobel's o xide breakdown for V-DS = 0 volts (for both normal incidence and angle); an d 2) when V-GS = 0 volts, energy deposited near the Si/SiO2 interface is mo re important than the energy deposited deeper in the epi.