Predicting radiation response from process parameters: Verification of a physically based predictive model

We evaluate the hole trapping response of twenty-two oxides subjected to tw enty-two different sets of processing parameters. The oxides were prepared in three different facilities. the Harris Semiconductor-Intersil Palm Bay f acility, the former Naval Research and Development Laboratory (NRAD) 4 " fa cility. and the new SPAWAR 6 " fabrication facility in San Diego, Californi a In twenty of the twenty-two cases, oxide hole trapping is almost complete ly determined by the highest processing temperature and is in reasonable ag reement with a recently proposed physically based predictive model. We have also evaluated Si/SiO2 interface trap (D-it) generation in a subset of fou r very simply processed oxides utilized in the hole trapping study. The D-i t results are also in reasonable agreement with the recently proposed model . Our results indicate that it is possible to make reasonably accurate predic tions of radiation response from processing parameters and that such predic tions can be: made with our current understanding of radiation damage pheno mena. (It should be emphasized that the current level of understanding is n ot yet complete. This work does not demonstrate that precise predictions in volving all imaginable process parameters are possible.).