O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639
Irradiation of electronic devices has varying impact on their electrical ch
aracteristics, according to the concomitant bias scenario. Under bias, ther
e is a process of continuous degradation; but recovery will occur if subseq
uent irradiation is performed without bias voltage. This phenomenon, known
as "Radiation-Induced Charge Neutralization" (RICN), was studied by us, usi
ng individual components (inverters) and complex integrated circuits (0.35
mu m static random access memories). Our study focussed on the effects of i
rradiation and bias on electronic component response.