Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs

Irradiation of electronic devices has varying impact on their electrical ch aracteristics, according to the concomitant bias scenario. Under bias, ther e is a process of continuous degradation; but recovery will occur if subseq uent irradiation is performed without bias voltage. This phenomenon, known as "Radiation-Induced Charge Neutralization" (RICN), was studied by us, usi ng individual components (inverters) and complex integrated circuits (0.35 mu m static random access memories). Our study focussed on the effects of i rradiation and bias on electronic component response.