Study of dose effects on IGBT-type devices subjected to gamma irradiation

Authors
Marceau, M Brisset, C Da Costa, M
Citation
M. Marceau et al., Study of dose effects on IGBT-type devices subjected to gamma irradiation, IEEE NUCL S, 46(6), 1999, pp. 1680-1685
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1680 - 1685
Database
ISI
SICI code
0018-9499(199912)46:6<1680:SODEOI>2.0.ZU;2-6
Abstract
This document describes the characterization tests performed on an IGBT tra nsistor, International Rectifier model IRGP450UD2. It also provides an anal ysis of IGBT behavior, using an electrical model and a PSPICE simulator.