Overcoming sealing concerns in a radiation-hardened CMOS technology

Authors
Maimon, J Haddad, N
Citation
J. Maimon et N. Haddad, Overcoming sealing concerns in a radiation-hardened CMOS technology, IEEE NUCL S, 46(6), 1999, pp. 1686-1689
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1686 - 1689
Database
ISI
SICI code
0018-9499(199912)46:6<1686:OSCIAR>2.0.ZU;2-5
Abstract
Scaling efforts to develop an advanced radiation-hardened CMOS process to s upport a 4M SRAM are described. Issues encountered during scaling of transi stor, isolation, and resistor elements are discussed, as well as the soluti ons used to overcome these issues. Transistor data, total dose radiation re sults, and the performance of navel resistors for prevention of single even t upsets (SEU) are presented.