Radiation effects on advanced flash memories

Radiation tests of advanced flash memories including, multi-level flash tec hnology, are compared with results from previous generations. Total dose fa ilure levels are comparable to or lower than those of older technologies, b ut are likely still caused by degradation of the internal charge pump. Smal l numbers of read errors were observed during single event tests of the mul ti-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts and rather than loss of electrons off the floating gate.