High energy electron dose-mapping using optically stimulated luminescent films

Authors
Dusseau, L Ranchoux, G Polge, G Plattard, D Saigne, F Bessiere, JC Fesquet, J Gasiot, J
Citation
L. Dusseau et al., High energy electron dose-mapping using optically stimulated luminescent films, IEEE NUCL S, 46(6), 1999, pp. 1757-1761
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1757 - 1761
Database
ISI
SICI code
0018-9499(199912)46:6<1757:HEEDUO>2.0.ZU;2-Q
Abstract
High energy electron dose mapping is a complex subject. Experiments using O ptically Stimulated Luminescent films behind various shielding structures a nd dual inline:packages are presented. The dose-depth deposition in an epox y package is also investigated. These results are compared with PENELOPE tr ansport code calculations.