Light emission studies of total dose and hot carrier effects on silicon junctions

Authors
Kerns, S Jiang, D de la Bardonnie, M Pelanchon, F Barnaby, H Kerns, DV Schrimpf, RD Bhuva, BL Mialhe, P Hoffmann, A Charles, JP
Citation
S. Kerns et al., Light emission studies of total dose and hot carrier effects on silicon junctions, IEEE NUCL S, 46(6), 1999, pp. 1804-1808
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
6
Year of publication
1999
Part
1
Pages
1804 - 1808
Database
ISI
SICI code
0018-9499(199912)46:6<1804:LESOTD>2.0.ZU;2-Q
Abstract
Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carri er stress alone causes coalescence of light emission consistent with juncti on-localized boron pas sivation by liberated hydrogen. Optical characteriza tion studies demonstrate the formation of junction micro-environments under hot carrier stress.