A 5 nm nitrided gate oxide for 0.25 mu m SOICMOS technologies

Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 n m nitrided gate oxide were evaluated for 0.25 mu m SOI CMOS devices intende d for use in 2.5V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found tha t the DC hot electron lifetime of the devices exceed 10 years at the operat ing voltage. Good gate oxide integrity and radiation hardening up to 1Mrad are shown to make this technology promising for radiation-hard ULSI applica tions.