We report on the fabrication and operation of all-NbN single Aux quantum (S
FQ) circuits with resistively shunted NbN/AlN/NbN tunnel junctions fabricat
ed on silicon substrates. The critical current varied by about +/-5% in 400
NbN/AlN/NbN junction arrays, where the junction area was 8x8 mu m(2). Crit
ical current densities of the NbN/AlN/NbN tunnel junctions showed exponenti
al dependence on the deposition time of the AlN barrier. By using the 12-nm
-thick Cu film as shunted resistors, non-hysteretic current-voltage charact
eristics were achieved. From dc-SQUID measurements, the sheet inductance of
our NbN stripline was estimated to be around 1.2 pH at 4.2 K. We designed
and fabricated circuits consisting of dc/SFQ converters, Josephson transmis
sion lines, and T flip-flop-based SFQ/dc converters. The circuits demonstra
ted correct operation with a bias margin of more than +/-15% at 4.2 K.