Chemical beam epitaxy grown carbon-doped base InP/InGaAs heterojunction bipolar transistor technology for millimeter-wave applications

Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) techno logy for millimeter-wave application is presented. Ultra-high carbon doping of mGaAs layers lattice-matched to InP with hole concentrations in excess of 1 x 10(20)/cm(3) has been achieved using a chemical beam epitaxy (CBE). Heavily carbon-doped base InP/InGaAs HBT epi structures were grown and smal l area, self-aligned HBTs with 1.5 mu m emitter finger width were fabricate d using triple mesa etching and polyimide planarization techniques. The fab ricated small area transistors showed a common-emitter current gain cut-off frequency (f(T)) as high as 200 GHz. Preliminary device reliability test r esults showed the potential of the heavily carbon-doped base InP/InGaAs HBT for high performance microwave and millimeter-wave applications. Applicati ons of the InP/InGaAs single heterojunction bipolar transistor (SHBT) and d ouble heterojunction bipolar transistor (DHBT) to a direct-coupled feedback amplifier and a power transistor, respectively, are presented.