Ji. Song, Chemical beam epitaxy grown carbon-doped base InP/InGaAs heterojunction bipolar transistor technology for millimeter-wave applications, IEICE TR EL, E83C(1), 2000, pp. 115-121
Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) techno
logy for millimeter-wave application is presented. Ultra-high carbon doping
of mGaAs layers lattice-matched to InP with hole concentrations in excess
of 1 x 10(20)/cm(3) has been achieved using a chemical beam epitaxy (CBE).
Heavily carbon-doped base InP/InGaAs HBT epi structures were grown and smal
l area, self-aligned HBTs with 1.5 mu m emitter finger width were fabricate
d using triple mesa etching and polyimide planarization techniques. The fab
ricated small area transistors showed a common-emitter current gain cut-off
frequency (f(T)) as high as 200 GHz. Preliminary device reliability test r
esults showed the potential of the heavily carbon-doped base InP/InGaAs HBT
for high performance microwave and millimeter-wave applications. Applicati
ons of the InP/InGaAs single heterojunction bipolar transistor (SHBT) and d
ouble heterojunction bipolar transistor (DHBT) to a direct-coupled feedback
amplifier and a power transistor, respectively, are presented.