Compositional effect on optical characteristic of solution grown Cd1-xMnxSe thin films

The Cd1-x MnxSe thin films were grown from elemental selenium, sodium sulph ite, cadmium chloride and MnCl2, onto, glass substrates by a solution growt h technique. As-deposited films were annealed at 600 K. The optical absorpt ion of annealed Cd1-xMnxSe thin films with different values of composition parameter x was then studied in the energy range from 1.10 to 4.0 eV. The C d0.5Mn0.5Se film showed allowed direct optical band gap with a room tempera ture gap of 1.58 +/- 0.01 eV. Another direct transition observed in these f ilms with x = 0.2, 0.3, 0.7, and 0.9 is ascribed to an optical transition f rom the crystal field split. valence band to the conduction band minimum. A third direct allowed transition from the spin-orbit valence band to the co nduction band is also observed in x = 0.2, 0.3, 0.7 and 0.9 films.