Thermal crystallization behaviour of Ge-Te-Se glasses

Ge10Te90-xSex (50 less than or equal to x less than or equal to 70) and Ge2 0Te80-xSex (x = 30, 50) glasses have been prepared by melt-quenching The th ermal crystallization behaviour of these samples has been studied by Differ ential Scanning Calorimetry (DSC), in order to characterise these glasses f or memory-threshold switching applications. It is found that Ge10Te90-xSex glasses have higher thermal stability and are more stable against devitrifi cation. These samples may be suitable for threshold switching devices. Ge20 Te80-xSex glasses, on the other hand, phase separate on heating and exhibit a double stage crystallization. Based on this, it can be expected that Ge2 0Te80-xSex samples will show memory behaviour. The activation energy for th ermal crystallization of a representative Ge10Te40-xSe50 glass belonging to the Ge10Te90-xSex series has been found by the Kissinger's method to be 0. 92 eV. The value of the activation energy obtained also indicates that Ge10 Te90-xSex samples are less prone to devitrification and more suitable for t hreshold behaviour.