We have fabricated wire structures with (sub)micron sizes in the charge-den
sity wave conductor NbSe3. Electrical transport measurements include comple
te mode-locking on Shapiro steps and show that the patterning has not affec
ted the CDW material. Our mesoscopic wires show strong fluctuation and hyst
eresis effects in the low-temperature current-voltage characteristics, as w
ell as a strong reduction of the phase-slip voltage. This reduction can not
be explained with existing models. We suggest that single phase-slip event
s are responsible for a substantial reduction of the CDW strain in micron-s
ized systems.