Mesoscopic NbSe3 wires

Citation
Hsj. Van Der Zant et al., Mesoscopic NbSe3 wires, J PHYS IV, 9(P10), 1999, pp. 157-160
Citations number
15
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P10
Year of publication
1999
Pages
157 - 160
Database
ISI
SICI code
1155-4339(199912)9:P10<157:MNW>2.0.ZU;2-L
Abstract
We have fabricated wire structures with (sub)micron sizes in the charge-den sity wave conductor NbSe3. Electrical transport measurements include comple te mode-locking on Shapiro steps and show that the patterning has not affec ted the CDW material. Our mesoscopic wires show strong fluctuation and hyst eresis effects in the low-temperature current-voltage characteristics, as w ell as a strong reduction of the phase-slip voltage. This reduction can not be explained with existing models. We suggest that single phase-slip event s are responsible for a substantial reduction of the CDW strain in micron-s ized systems.