Pressure effects on the CDW transitions and magnetoresistances in NbSe3

Citation
S. Yasuzuka et al., Pressure effects on the CDW transitions and magnetoresistances in NbSe3, J PHYS IV, 9(P10), 1999, pp. 207-209
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P10
Year of publication
1999
Pages
207 - 209
Database
ISI
SICI code
1155-4339(199912)9:P10<207:PEOTCT>2.0.ZU;2-V
Abstract
Magnetoresistance (MR) of NbSe3 has been measured between 2 K and 150 K und er high pressure including critical pressures (P-c2 and P-c1) where the low er and upper CDW phase are totally suppressed by pressure. respectively. At ambient pressure. a large MR (LMR) is observed just below T-c2, but no MR is detected above T-c2. Under high pressure, in addition to the LMR. we obs erve newly a MR above T-c2. Here we call it the pressure-induced MR (PIMR). The LMR always appears as long as the lower CDW phase exists. but it rapid ly disappears above P-c2. Similarly. the PIMR disappears above P-c1. Furthe rmore. no anomalies associated with the field-induced CDW are observed with in our experimental limits. From these findings, we claim that the LMR and PIMR are due to normal carriers in small pockets created by a pressure-depe ndent imperfect nesting of the Fermi surface in the CDW transitions.