We studied the interlayer tunneling in Bi-2212 stacks with in plane size va
riation down to submicron size. For submicron junctions we found experiment
al evidence of Coulomb charging effets. The Coulomb blockade leads to the d
rop down of the Josephson critical current density and to appearance of per
iodic Coulomb staircase structure of current peaks on the IV characteristic
s. The period of the structure corresponds to the charge energy of the sing
le Cooper pair charge soliton including the total number of the elementary
junctions in the stack (similar to 50). We analyzed conditions of the exist
ence of charging effects in layered high-T-c materials of Bi-2212 type.