Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

Authors
Gopal, AV Kumar, R Vengurlekar, AS Bosacchi, A Franchi, S Pfeiffer, LN
Citation
Av. Gopal et al., Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells, J APPL PHYS, 87(4), 2000, pp. 1858-1862
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
4
Year of publication
2000
Pages
1858 - 1862
Database
ISI
SICI code
0021-8979(20000215)87:4<1858:PSOEPS>2.0.ZU;2-J
Abstract
We obtain the temperature dependence of the homogeneous linewidth of excito ns in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measur ements. The results indicate that exciton scattering rates with optical pho nons are larger in bulk GaAs than in QWs. (C) 2000 American Institute of Ph ysics. [S0021-8979(00)08304-3].