Composition dependence of the Hall effect in amorphous TbxCo1-x thin films

The Hall effect in amorphous TbxCo1-x thin films has been studied quantitat ively with respect to Tb at. % in films. Amorphous TbxCo1-x thin films exhi bit unusually large spontaneous Hall coefficients (R-s approximate to 2 x 1 0(-9) Omega cm/G, whose sign is strongly dependent on the film composition as governed by the relation rho(H) = R(s)4 pi M-S. At Tb compositions below the compensation composition x(comp), the Hall resistivity rho(H) is posit ive and the sign is reversed for Tb compositions above x(comp). Even though the saturation magnetization at x > x(comp) is lower than at x < x(comp), the absolute Hall resistivity \rho(H)\ and Hall coefficient \R-s\ are highe r. As the Tb content increases in the films, the resistivity increases. In amorphous TbxCo1-x thin films, the Hall angle \rho(H)/rho\ is sensitive to the resistivity of the films. On the basis of electrical resistivities, Hal l resistivities, and Hall angles in amorphous TbxCo1-x films, the side jump Delta y of 0.16 to 0.26 Angstrom was calculated. (C) 2000 American Institu te of Physics. [S0021-8979(00)03604-5].