Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

We present a detailed study of the MOVPE growth of 800 nm diode laser struc tures based on the combination of a GaAsP quantum well with well-establishe d AlGaAs waveguide structures. By optimizing the strain and thickness of th e quantum well highly-reliable diode lasers with low threshold current and high efficiency were demonstrated. 100 mu m aperture "broad area" devices m ounted epi-side up achieve a CW output power of 8.9 W with a wall-plug effi ciency of 50%. These output powers represent record values for diode lasers in this wavelength range. Reliability measurements at 1.5 W and 50 degrees C ambient temperature suggest lifetimes > 10 000 h.