MOVPE growth of AlGaAs/GaInP diode lasers

GaAs-based diode lasers for emission wavelengths between 800 nn and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For w avelengths above 940 nm broad area devices with InGaAs QWs show state-of-th e-art threshold current densities. Ridge-waveguide lasers fabricated by sel ective etching achieve 200 mW CW monomode output powers. (In)GaAsP QW-based diode lasers with an emitting wavelengths around 800 nm suffer from proble ms at the upper GaInP/AlGaAs interface. Asymmetric structures with a lower AlGaAs/GaInP and an upper AlGaAs/AlGaAs waveguide not only avoid this inter face but also offer better carrier confinement. Such structures show very h igh slope efficiencies and a high T-0. Maximum output powers of 7 W CW are obtained from 4 mm long devices.