(Al)GaInP multiquantum well LEDs on GaAs and Ge

MOVPE growth of AlGaInP layers on GaAs and Ge have been demonstrated. The s urface morphology of the epilayers was smooth under optimized growth condit ions. The epilayers showed good PL intensity on both GaAs and Ge substrates . It has been observed that at room temperature the PL intensity drops in t he first few seconds after excitation and attains a steady state. The Zn-do ped AlGaInP did not show any signs of H-passivation. The MQW LEDs on both t he substrates produced electroluminescence which increased with applied cur rent. Results indicate the feasibility of AlGaInP LEDs on Ge.