Exploring new active regions for type IInAsSb strained-layer lasers

We report on the metal-organic chemical vapor deposition (MOCVD) of midinfr ared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and straine d, type I, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low tem perature (<20 K) photoluminescence wavelengths ranging from 3.4 mu m to 4.8 mu m. We find a variation of bandgap from 0.272 to 0.324 eV for layer thic knesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SL S, optically pumped laser structure was grown on an InAs substrate with AlA s0.16Sb0.84 cladding layers. A lasing threshold and spectrally narrowed las er emission were seen from 80 K through 240 K, the maximum temperature wher e lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T-0 = 72 K, from 80 K to 200 K.