MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

Using a specially-designed spectrometer enabling combined reflectance aniso tropy spectroscopy (IRAS) and reflectance measurements on rotating substrat es in a commercial MOVPE reactor, we report the first full-spectroscopic RA S-monitoring of(Al,Ga)InP-based 650 nm laser growth. First, a spectral data base was built up from systematic studies of AlGaInP RAS signatures for dif ferent Al compositions, doping levels and growth temperatures. These data a re subsequently used for the interpretation of characteristic RAS fingerpri nts taken throughout the entire laser growth process. From the analysis of characteristic changes in the RAS spectra even small deviations from the op timum process (doping levels, composition, etc.) which would effect the per formance of the final device can be detected.