GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

Citation
Da. Allwood et al., GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment, J ELEC MAT, 29(1), 2000, pp. 99-105
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
1
Year of publication
2000
Pages
99 - 105
Database
ISI
SICI code
0361-5235(200001)29:1<99:GHTOCA>2.0.ZU;2-N
Abstract
The real and imaginary components of the GaAs refractive index at temperatu res between 20-700 degrees C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 63 3 nm wavelength light from a deoxidized GaAs surface. By using these temper ature-dependent optical constants for GaAs, modeling has allowed the behavi or of surface photoabsorption (SPA) signals with temperature and oxide laye rs present to be predicted for different angles of incidence. The experimen tally observed SPA signals during deoxidization of GaAs show strong qualita tive agreement with these calculations at each of the angles of incidence c onsidered. The measurement of data and application to modeling provides a p latform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.