Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

We investigated the delta-doping (delta-doping) of Si using SiH4 on MOVPE-g rown GaAs (001) vicinal surfaces to explore the possibility of selective in corporation of Si along atomic steps, and to demonstrate doping quantum wir es by the combination of multiatomic steps and wire-like doping. It was fou nd that the doping density on vicinal surfaces was enhanced as the misorien tation angle was increased, which suggested the enhanced decomposition of S iH4 and the selective incorporation of Si at step edges. It was also found that this selective incorporation could be enhanced by annealing the surfac e prior to the delta-doping, which resulted from the reduced incorporation of Si at the terrace regions. Anisotropic electron transport properties whi ch are expected from the wire-like incorporation along step edges are also discussed.