Enhancement of tunneling magnetoresistance through a magnetic barrier

Citation
Cr. Chang et Sp. Chen, Enhancement of tunneling magnetoresistance through a magnetic barrier, J MAGN MAGN, 209(1-3), 2000, pp. 61-64
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
209
Issue
1-3
Year of publication
2000
Pages
61 - 64
Database
ISI
SICI code
0304-8853(200002)209:1-3<61:EOTMTA>2.0.ZU;2-C
Abstract
Magnetoresistance of a spin-filter junction is theoretically studied and a large polarization of the tunneling current is produced from spin-dependent barrier. Two kinds of spin-filter junctions are proposed and their magneto resistance ratios are much larger than that of the conventional spin polari zed tunneling junction at appropriate conditions. (C) 2000 Elsevier Science B.V. All rights reserved.