Citation
Sc. Ma et al., The GMR effect of Cu/Co multilayer on Si(100), J MAGN MAGN, 209(1-3), 2000, pp. 131-134
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853
→ ACNP
Volume
209
Issue
1-3
Year of publication
2000
Pages
131 - 134
Database
ISI
SICI code
0304-8853(200002)209:1-3<131:TGEOCM>2.0.ZU;2-1
Abstract
(Cu/Co)(10) was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by
e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1%
at 10 K and it reduced to 4% at room temperature, while for the sample on S
iO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The
MR extracted from minor R-H loop was higher than that in major R-H loop. T
his could be due to the increment of domain wall which enhances the electro
ns scattering. (C) 2000 Elsevier Science B.V. All rights reserved.