The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is l
ower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy,
we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top l
ayers below 350 K. The segregation of Ag atoms improves the diffusion of Co
into Si (1 1 1) substrate, Annealing 10.5 ML Co/Si(1 1 1) film causes the
easy axis of magnetization to transform from an in-plane to a cant out-of-p
lane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persist
s after annealing. (C) 2000 Elsevier Science B.V. All rights reserved.