Relaxation of pinned domains in patterned magnetic thin films

Citation
Th. Wu et al., Relaxation of pinned domains in patterned magnetic thin films, J MAGN MAGN, 209(1-3), 2000, pp. 224-227
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
209
Issue
1-3
Year of publication
2000
Pages
224 - 227
Database
ISI
SICI code
0304-8853(200002)209:1-3<224:ROPDIP>2.0.ZU;2-M
Abstract
We have shown in previous papers that the magnetic domains could be pinned inside the artificially patterned hole arrays under suitable geometry aspec t ratio. Nevertheless, we have found that if we reverse the magnetization d irections through domain wall motion, the confined domains expand from smal ler territory into larger territory for some samples. In addition, the pinn ed domains maintained the same moment's orientation after the domain expans ion. The possible reason for the pinned domains to retain the same moment's orientation maybe those pinning holes that act as high anisotropy defects. Thus, domain wall motion was around the high anisotropy sites and only pee led away the domain in the land area while the enclosed domain of the hole area maintained the same orientation. Moreover, the feasible reason for the expansion domains is the coercive force, which is perpendicular to the sid e-walls and pinning the domains inside the holes, are relaxed and thus caus ing the domains growth. This phenomenon is called the relaxation of pinning domains. (C) 2000 Elsevier Science B.V. All rights reserved.