The model of crack propagation in polycrystalline copper at various propagating rates

Authors
Citation
Hl. Huang et Nj. Ho, The model of crack propagation in polycrystalline copper at various propagating rates, MAT SCI E A, 279(1-2), 2000, pp. 254-260
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
279
Issue
1-2
Year of publication
2000
Pages
254 - 260
Database
ISI
SICI code
0921-5093(20000229)279:1-2<254:TMOCPI>2.0.ZU;2-E
Abstract
In this work, the fracture surface of the crack paths in specimens of pure copper have been studied by secondary electron imaging and the dislocation structures in front of crack tip were observed by backscattered electron im aging. II was observed that the propagation of the cracks is mainly transgr anular, but the behavior models change in accordance with the variation of dislocation structures located at the front of the crack tip. With a 10(-6) mm/cycle rate of cracking, the dislocation structures are in full developm ent with a vast range of area. Therefore, a model for the propagation of cr acks is transgranular along the sides of grain boundaries (GB). However, wi th a propagation rate of 10(-7) mm/cycle, the dislocation structures evolve incompletely, and the range of cell or ladder-like walls of persistent sli p band is limited to a small area. The sequence of crack propagation is ini tiation, propagation in strain localization in front of the crack tip, and then coalescence with the crack tip. The crack propagation is transgranular , but the side of the GB is still the preferred path. A model is proposed t o explain these behaviors. The major factors of the model are the evolution of the dislocation structures at the crack tips, and the interactions betw een the grain boundaries and persistent slip bands. (C) 2000 Elsevier Scien ce S.A. All rights reserved.