Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics

Authors
Hsu, DT Shi, FG Lopatin, S Shacham-Diamand, Y Zhao, B Brongo, M Vasudev, PK
Citation
Dt. Hsu et al., Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics, MAT SC S PR, 2(1), 1999, pp. 19-22
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
2
Issue
1
Year of publication
1999
Pages
19 - 22
Database
ISI
SICI code
1369-8001(199904)2:1<19:ECDSIC>2.0.ZU;2-S
Abstract
It is demonstrated that the electroless Cu deposition solution can lead to a significant chemical change in FLARE(TM) 1.51 as indicated by the observe d disappearance of the 1726 cm(-1) absorption band from IR spectra. Two pos sible reaction mechanisms are suggested for the observed change in FLARE(TM ) 1.51. (C) 1999 Elsevier Science Ltd. All rights reserved.