Nanometer scale patterning by scanning tunelling microscope assisted chemical vapour deposition

Single electron devices are of great interest for their possible replacemen t of transistors in memories. The key to the preparation of these component s is the production of low capacitance dots, which requires a lithography s tep at nanometric scale. Direct patterning of metallic features at nanometr ic scale is possible by local decomposition of gaseous molecules under a sc anning tunneling microscope (STM) tip, by application of a voltage of a few volts on the sample (STM assisted chemical vapour deposition). The gaseous molecules are dissociated by the high electric field (about 10(7) V/cm) wi thin the tip-sample gap. Rhodium lines and dots have been deposited on gold or silicon surfaces by decomposition of [Rh(PF3)(2)Cl](2). The influence o f the sample voltage was studied and the resolution limit of the technique was investigated. (C) 2000 Elsevier Science B.V. All rights reserved.