Transformer coupled plasma dielectric etch for 0.25 mu m technologies

Manufacturable etch processes for 0.18 mu m technology TEOS bi-level contac ts and vias (TEOS or TEOS/FOX/TEOS) are demonstrated in a low pressure high density reactor. Good CD control and high yields are demonstrated for stru ctures down to 0.25 mu m. In the process regimes used, the photoresist etch rate and the selectivity to underlayer are correlated with the amount of f ree fluorine in the plasma. The same TCP 9100 reactor can be used for low k polymer (Silk(TM) from Dow Chemical) etching with in situ hardmask open. A compromise between hard mask facetting and bowing has to be made unless pa ssivating gases are added to an O-2/N-2 chemistry. For several architecture s, initial results show potential integration with Cu. (C) 2000 Elsevier Sc ience B.V. All rights reserved.