Comparative study of Ni-silicide and Co-silicide for sub 0.25-mu m technologies

Authors
Lauwers, A Besser, P Gutt, T Satta, A de Potter, M Lindsay, R Roelandts, N Loosen, F Jin, S Bender, H Stucchi, M Vrancken, C Deweerdt, B Maex, K
Citation
A. Lauwers et al., Comparative study of Ni-silicide and Co-silicide for sub 0.25-mu m technologies, MICROEL ENG, 50(1-4), 2000, pp. 103-116
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
50
Issue
1-4
Year of publication
2000
Pages
103 - 116
Database
ISI
SICI code
0167-9317(200001)50:1-4<103:CSONAC>2.0.ZU;2-U
Abstract
In this work, the phase formation is compared for Ni- and Co-silicidation w ith and without Ti cap. In addition, the electrical performance of Ni-silic idation with and without Ti-cap is investigated and compared to the perform ance of a Co-silicidation process with a Ti cap that has the same Si consum ption. The lateral confinement of the silicide in the active areas is also studied. (C) 2000 Elsevier Science B.V. All rights reserved.