Pre-alloying implants with indium as an enabling technology to extend titanium salicide towards 0.1-mu m linewidths

Pre-amorphisation implants (PAI) are the most promising technique to extend the use of TiSi2 towards 0.1 mu m. We report an implant strategy using ind ium, employing its favourable alloying properties towards silicon, titanium and the dopants. Its implementation in a 0.18-mu m CMOS technology gave fu ll C54-TiSi2 transformation on poly lines. Additionally the NMOS contact re sistances were found to be largely reduced. Data on unpatterned monitor waf ers show indium to reduce the C54-TiSi2 transformation temperature by at le ast 50 degrees C, whereas the reduction found when using arsenic as implant species is 25 degrees C. (C) 2000 Elsevier Science B.V. All rights reserve d.