Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation

Authors
Teichert, J Hobert, H Bischoff, L Hausmann, S
Citation
J. Teichert et al., Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation, MICROEL ENG, 50(1-4), 2000, pp. 187-192
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
50
Issue
1-4
Year of publication
2000
Pages
187 - 192
Database
ISI
SICI code
0167-9317(200001)50:1-4<187:RIOLDI>2.0.ZU;2-2
Abstract
CoSi2 layers were produced by 70 keV Co focused ion implantation into Si(11 1). Within a comparative study the CoSi2 layer quality and implantation dam age were investigated as a function of pixel dwell-time and substrate tempe rature. Irradiation damage measurements were done by micro-Raman analysis. The results suggest that the dwell-time dependence of the CoSi2 layer forma tion - continuous layers for short and disrupted ones for long dwell-times - is caused by an accordant transition from crystalline to amorphous silico n. (C) 2000 Elsevier Science B.V. All rights reserved.