Thin films of CoSi2 on Si1-yCy substrate layers

Authors
Teichert, S Falke, M Giesler, H Sarkar, DK Beddies, G Hinneberg, HJ Lippert, G Griesche, J Osten, HJ
Citation
S. Teichert et al., Thin films of CoSi2 on Si1-yCy substrate layers, MICROEL ENG, 50(1-4), 2000, pp. 193-197
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
50
Issue
1-4
Year of publication
2000
Pages
193 - 197
Database
ISI
SICI code
0167-9317(200001)50:1-4<193:TFOCOS>2.0.ZU;2-X
Abstract
The reaction of Co with epitaxial Si1-yCy(001) films is investigated with r egard to dependence on annealing temperature and C concentration y. Resista nce measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 degrees C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has be en observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C co ncentration. (C) 2000 Elsevier Science B.V. All rights reserved.