Plasma etching of epitaxial CoSi2 films with a ternary Co-Ti-Si top layer f
ormed during solid phase reaction of Co/Ti bilayers on Si(100) was investig
ated. By using a pure argon-RF-plasma the ternary top layer was sputtered w
ithout formation of a disturbing overlayer. The main disadvantage of this p
rocess is the formation of a crater-like surface morphology connected with
a strong increase of the surface roughness. Etching the ternary top layer b
y a reactive process (CF4/Ar) leads to a smoother surface, but a Co-fluorid
e film was grown on top of the silicide surface. In a following argon etch
process this disturbing overlayer can be removed completely, simultaneously
the roughness of the etched silicide surface is reduced considerably. (C)
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