Electrical properties of rare earth silicides produced by channeled ion beam synthesis

Citation
Sm. Hogg et al., Electrical properties of rare earth silicides produced by channeled ion beam synthesis, MICROEL ENG, 50(1-4), 2000, pp. 211-215
Citations number
22
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
50
Issue
1-4
Year of publication
2000
Pages
211 - 215
Database
ISI
SICI code
0167-9317(200001)50:1-4<211:EPORES>2.0.ZU;2-8
Abstract
Electrical measurements have been performed on ErSi1.7, YSi1.7 and Er0.5Y0. 5Si1.7, produced by channeled ion beam synthesis. The results have been com pared with thin films of the same rare earth silicides produced by other me thods. The room temperature resistivities of the ErSi1.7, YSi1.7 and Er0.5S i1.7 are 52, 69 and 87 mu Ohm cm, respectively, significantly higher than t he reported values for MBE synthesised layers. The ErSi1.7 shows evidence o f magnetic ordering, but this is not observed in either the YSi1.7 or the E r0.5Y0.5Si1.7 down to 3 K. (C) 2000 Elsevier Science B.V. All rights reserv ed.